Input: [0] Ireland [1] dietetic foods, food supp., fortified foods [2] unauthorised substance 1,3 dimethylamylamine [3] food contact materials [4] migration of primary aromatic amines [5] poultry meat and poultry meat products [7] food contact materials [8] migration of DEHP - di(2-ethylhexyl) phthalate [9] prepared dishes and snacks [10] high content of aluminium [6]

Output: unauthorised substance clopidol

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] Italy [1] food contact materials [2] migration of chromium [3] fish and fish products [4] mercury [5] food contact materials [7] food contact materials [8] migration of nickel [9] fish and fish products [10] parasitic infestation with Anisakis [6]

Output: migration of manganese

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] Latvia [1] dietetic foods, food supp., fortified foods [2] unauthorised irradiation [3] dietetic foods, food supp., fortified foods [4] benzethonium chloride [5] food contact materials [7] non-alcoholic beverages [8] unauthorised use of colour E 127 - erythrosine [9] dietetic foods, food supp., fortified foods [10] irradiation in an unauthorised facility [6]

Output: migration of formaldehyde

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] Lithuania [1] dietetic foods, food supp., fortified foods [2] irradiation in an unauthorised facility [3] dietetic foods, food supp., fortified foods [4] unauthorised irradiation [5] dietetic foods, food supp., fortified foods [7] fats and oils [8] benzo(a)pyrene [9] nuts, nut products and seeds [10] aflatoxins [6]

Output: high content of lead

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] Luxembourg [1] food contact materials [2] migration of formaldehyde [3] food contact materials [4] migration of melamine [5] dietetic foods, food supp., fortified foods [7] non-alcoholic beverages [8] E 210 - benzoic acid unauthorised [9] other food product / mixed [10] ochratoxin A [6]

Output: unauthorised substance sibutramine

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] Malta [1] fish and fish products [2] mercury [3] fruits and vegetables [4] aflatoxins [5] food contact materials [7] fish & fish products [8] histamine [9] crustaceans and products thereof [10] too high content of sulphite [6]

Output: improper health certificate(s)

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] The Netherlands [1] nuts, nut products and seeds [2] aflatoxins [3] feed materials [4] aflatoxins [5] fruits and vegetables [7] herbs and spices [8] Salmonella spp. [9] food contact materials [10] migration of formaldehyde [6]

Output: methomyl

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] Poland [1] nuts, nut products and seeds [2] infested with mites [3] food contact materials [4] migration of lead [5] nuts, nut products and seeds [7] dietetic foods, food supp., fortified foods [8] unauthorised substance 1,3 dimethylamylamine [9] food contact materials [10] migration of cadmium [6]

Output: living and dead mites

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] Portugal [1] food contact materials [2] migration of epoxidised soybean oil (ESBO) [3] other food product / mixed [4] high content of aluminium [5] cereals and bakery products [7] poultry meat and poultry meat products [8] unauthorised substance clopidol [9] dietetic foods, food supp., fortified foods [10] unauthorised novel food [6]

Output: unauthorised genetically modified

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] Romania [1] fruits and vegetables [2] imazalil [3] fish and fish products [4] parasitic infestation with Anisakis [5] nuts, nut products and seeds [7] dietetic foods, food supp., fortified foods [8] absence of health certificate(s) [9] dietetic foods, food supp., fortified foods [10] attempt to illegally import [6]

Output: aflatoxins

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] Slovakia [1] fruits and vegetables [2] unauthorised food additive formic acid [3] honey and royal jelly [4] sulfamethoxazole unauthorised [5] nuts, nut products and seeds [7] herbs and spices [8] undeclared celery [9] cereals and bakery products [10] E 210 - benzoic acid unauthorised [6]

Output: unsuitable organoleptic characteristics

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] Slovenia [1] dietetic foods, food supp., fortified foods [2] unauthorised substance sibutramine [3] fruits and vegetables [4] dimethoate [5] cereals and bakery products [7] confectionery [8] undeclared milk ingredient [9] food contact materials [10] migration of chromium [6]

Output: undeclared milk ingredient

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] Spain [1] fish and fish products [2] poor temp control - rupture of the cold chain - [3] nuts, nut products and seeds [4] aflatoxins [5] crustaceans and products thereof [7] cephalopods and products thereof [8] poor temperature control - rupture of the cold chain - [9] dietetic foods, food supp, fortified foods [10] unauthorised substance 1,3 dimethylamylamine [6]

Output: poor temperature control - rupture of the cold chain -

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] Sweden [1] meat and meat products (other than poultry) [2] Salmonella [3] meat and meat products (other than poultry) [4] Salmonella typhimurium [5] meat and meat products (other than poultry) [7] dietetic foods, food supp., fortified foods [8] unauthorised substance 1,3 dimethylamylamine [9] feed materials [10] Salmonella Mbandaka [6]

Output: Salmonella spp.

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [0] UK [1] feed materials [2] aflatoxins [3] fruits and vegetables [4] Salmonella spp. [5] nuts, nut products & seeds [7] fruits and vegetables [8] monocrotophos [9] fruits and vegetables [10] acephate [6]

Output: aflatoxins

European Commission - PRESS RELEASES - Press release - 2012 Report on Europe’s Rapid Alert System for Food and Feed: Questions & Answers


Input: [Economic Impact] Waste in harvesting and industrial processing. Reduction of incentives to sustainable forest management. Companies become addicted to subsidies and effectively lobby to keep them. Incentives to corrupt deals. [Equity Impact] Large enterprise benefits the most; small enterprises benefit less or do not benefit at all. Government loses income. Private forest landowners are deprived of potentially profitable forest investments. [Environmental Impact] Excessive levels of forest cut, inadequate incentives to maintain environmental services of forests. [Policy]

Output: Supply of forest industrial material at subsidized prices to promote industrial development

Forests | Free Full-Text | People, Governance and Forests—The Stumbling Blocks in Forest Governance Reform in Latin America | HTML

Appendix 1. Unintended negative effects of common forest policies.


Input: [Economic Impact] Reduction of incentives for local people to invest in forest management as uncertainty of resulting benefits increases. [Equity Impact] Negative impact on the poor and indigenous groups that cannot use their lands as a capital asset. Use of forest lands by external actors, such as corporations in concession areas impoverishes the poor further and creates conditions for social and conflict and often violent political upheaval [Environmental Impact] Conflicts and uncertainty contribute to deforestation, propagation of forest fires and general degradation of the forest environment. [Policy]

Output: No recognition of traditional forest land ownership rights, to concentrate presumably superior decisions in the hands of government

Forests | Free Full-Text | People, Governance and Forests—The Stumbling Blocks in Forest Governance Reform in Latin America | HTML


Input: [Economic Impact] Economic uses of forest are closed. Industry may have to depend on higher priced imports. The commercial value of existing forests may decrease substantially, thus reducing profitability of sustainable forest management [Equity Impact] Loggers, including some low income logging communities, may go out of business. Industrialists may see their profitability reduce if imported logs are pricier than domestic supplies. Possible contraction of logging and industrial activity may reduce rural and industrial employment. [Environmental Impact] Commercial value of forest resources may be reduced enough to encourage conversion to other more profitable uses of land, particularly if land is scarce. These other uses may be less environmentally desirable than forest uses of land. [Policy]

Output: Logging bans, to protect the integrity of natural forests

Forests | Free Full-Text | People, Governance and Forests—The Stumbling Blocks in Forest Governance Reform in Latin America | HTML


Input: [Economic Impact] Disincentive to investments in forest management and afforestation, particularly on private lands. [Equity Impact] Policy negatively affects land owners that otherwise may have engaged in rehabilitating forest lands. Loggers and industrialists have a greater opportunity and incentive to engage in corrupt acts. [Environmental Impact] Policy may promote deforestation to avoid government control of forest resources. [Policy]

Output: All forest resources are owned by the state, to be managed by government in closer consonance with societal objectives

Forests | Free Full-Text | People, Governance and Forests—The Stumbling Blocks in Forest Governance Reform in Latin America | HTML


Input: [Economic Impact] Incentive to deforestation to prove land occupation. Valuable economic forest resources are lost. [Equity Impact] This option is usually not open to large corporations. Small farmers may benefit by obtaining land ownership but by sacrificing potential forest benefits that could have been obtained in absence of deforestation. [Environmental Impact] Deforestation is an effective way to prove occupation. Incentive to destructive environmental practices. [Policy]

Output: Land ownership is contingent on demonstration of occupation

Forests | Free Full-Text | People, Governance and Forests—The Stumbling Blocks in Forest Governance Reform in Latin America | HTML


Input: [Economic Impact] Cost to the national treasury. Opportunities for corruption and misallocation of economic resources increase due to price distortions. Economic natural forest values may be lost particularly if plantations replace natural forests. [Equity Impact] Large plantations may lead to displacement of local people. Traditional agrosilvicultural methods of forest resource management may be at a disadvantage and displaced by monocultures. Subsidies may inflate land prices and thus redistribute wealth to existing landowners. Small, undercapitalized landowners may not be able to access subsidies. Subsidies tend to disproportionately favor large corporations. [Environmental Impact] Deforestation of natural forest may occur to clear land to establish plantations. Monocultures may expand at the expense of mixed natural forests. Subsidies often lead to extremely poor quality of plantations. [Policy]

Output: Plantation subsidies

Forests | Free Full-Text | People, Governance and Forests—The Stumbling Blocks in Forest Governance Reform in Latin America | HTML


Input: [Economic Impact] High transaction costs. Policy opens opportunities for corruption and misallocation of resources. Depending on the effectiveness of government action, transit restrictions may reduce commercial value of some timber species and contribute to forests being replaced by alternative uses of land. [Equity Impact] Small producers may find themselves at a commercial disadvantage if they are unable to pay bribes. Larger corporations may control controllers. [Environmental Impact] In practice these rules have had negligible impact on the conservation of forest resources. [Policy]

Output: Timber transit rules

Forests | Free Full-Text | People, Governance and Forests—The Stumbling Blocks in Forest Governance Reform in Latin America | HTML


Input: [Games] Stad [Description]

Output: A Water-type attack. Has a one-in-three chance of reducing the target's Speed.

Bubble (move) - Bulbapedia, the community-driven Pokémon encyclopedia


Input: [Games] Stad2 [Description]

Output: A Water-type attack. Has a one-in-ten chance of reducing the target's Speed.

Bubble (move) - Bulbapedia, the community-driven Pokémon encyclopedia


Input: [Games] GSC [Description]

Output: An attack that may reduce Speed.

Bubble (move) - Bulbapedia, the community-driven Pokémon encyclopedia


Input: [Games] RSE [Description]

Output: An attack using bubbles. May lower the foe’s Speed.

Bubble (move) - Bulbapedia, the community-driven Pokémon encyclopedia


Input: [Games] FRLG [Description]

Output: A spray of bubbles hits the foe. It may lower the foe’s Speed stat.

Bubble (move) - Bulbapedia, the community-driven Pokémon encyclopedia


Input: [Games] Colo. [Description]

Output: A bubble attack that may lower the target's Speed.

Bubble (move) - Bulbapedia, the community-driven Pokémon encyclopedia


Input: [Games] DPPtHGSS [Description]

Output: A spray of countless bubbles is jetted at the foe. It may also lower the target’s Speed stat.

Bubble (move) - Bulbapedia, the community-driven Pokémon encyclopedia


Input: [Games] BWB2W2 [Description]

Output: A spray of countless bubbles is jetted at the opposing team. It may also lower the targets' Speed stats.

Bubble (move) - Bulbapedia, the community-driven Pokémon encyclopedia


Input: [Games] Conq [Description]

Output: A spray of countless bubbles is jetted at the target. It may also lower the target's Speed.

Bubble (move) - Bulbapedia, the community-driven Pokémon encyclopedia


Input: [KW term] Transport [FDR (all)] 0 [SDKW level] Least Informative Direct [0]

Output: Biological process

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Ion transport [FDR (all)] 0 [SDKW level] Moderately Informative Direct [0]

Output: Biological process

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Lipid transport [FDR (all)] 0.000000000002802 [SDKW level] Informative Direct [0]

Output: Biological process

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Calcium transport [FDR (all)] 0 [SDKW level] Highly Informative Direct [0]

Output: Biological process

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Potassium transport [FDR (all)] 0 [SDKW level] Highly Informative Direct [0]

Output: Biological process

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Sodium transport [FDR (all)] 0.00000000006942 [SDKW level] Highly Informative Direct [0]

Output: Biological process

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Membrane [FDR (all)] 0 [SDKW level] Least Informative Direct [0]

Output: Cellular component

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Endoplasmic reticulum [FDR (all)] 0 [SDKW level] Moderately Informative Direct [0]

Output: Cellular component

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Golgi apparatus [FDR (all)] 0 [SDKW level] Moderately Informative Direct [0]

Output: Cellular component

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Cell membrane [FDR (all)] 0.0000000004304 [SDKW level] Moderately Informative Direct [0]

Output: Cellular component

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Endosome [FDR (all)] 0.00005507 [SDKW level] Moderately Informative Direct [0]

Output: Cellular component

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Sarcoplasmic reticulum [FDR (all)] 0 [SDKW level] Highly Informative Direct [0]

Output: Cellular component

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Alternative splicing [FDR (all)] 0.0002673 [SDKW level] Least Informative Direct [0]

Output: Coding sequence diversity

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Disease mutation [FDR (all)] 0.00000002281 [SDKW level] Least Informative Direct [0]

Output: Disease

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Transmembrane [FDR (all)] 0 [SDKW level] Least Informative Direct [0]

Output: Domain

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Metal-binding [FDR (all)] 0 [SDKW level] Least Informative Direct [0]

Output: Molecular function

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Nucleotide-binding [FDR (all)] 0 [SDKW level] Least Informative Direct [0]

Output: Molecular function

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] ATP-binding [FDR (all)] 0 [SDKW level] Moderately Informative Direct [0]

Output: Molecular function

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Calcium [FDR (all)] 0 [SDKW level] Moderately Informative Direct [0]

Output: Molecular function

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Magnesium [FDR (all)] 0 [SDKW level] Moderately Informative Direct [0]

Output: Molecular function

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Calmodulin-binding [FDR (all)] 0 [SDKW level] Informative Direct [0]

Output: Molecular function

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Copper [FDR (all)] 0 [SDKW level] Informative Direct [0]

Output: Molecular function

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Potassium [FDR (all)] 0 [SDKW level] Informative Direct [0]

Output: Molecular function

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Sodium [FDR (all)] 0 [SDKW level] Informative Direct [0]

Output: Molecular function

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Cadmium [FDR (all)] 0 [SDKW level] Highly Informative Direct [0]

Output: Molecular function

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Hydrolase [FDR (all)] 0 [SDKW level] Least Informative Direct [0]

Output: Post-translational modification

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Phosphoprotein [FDR (all)] 0 [SDKW level] Least Informative Direct [0]

Output: Post-translational modification

Calcium ATPase, transmembrane domain M superfamily


Input: [KW term] Nitration [FDR (all)] 0.00001512 [SDKW level] Informative Direct [0]

Output: Post-translational modification

Calcium ATPase, transmembrane domain M superfamily


Input: [0] Yin (Solid) [Wood] Liver [Earth] Spleen [Metal] Lungs [Water] Bladder [Fire]

Output: Heart

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Yang (Hollow) [Wood] Gall Bladder [Earth] Stomach [Metal] Large Intestine [Water] Kidneys [Fire]

Output: Small Intestine

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Season [Wood] Spring [Earth] Long Summer [Metal] Autumn [Water] Winter [Fire]

Output: Summer

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Climate [Wood] Wind [Earth] Dampness [Metal] Dry [Water] Cold [Fire]

Output: Heat

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Color [Wood] Green [Earth] Yellow [Metal] White [Water] Blue / Black [Fire]

Output: Red

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Taste [Wood] Sour [Earth] Sweet [Metal] Pungent [Water] Salty [Fire]

Output: Bitter

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Smell [Wood] Rancid [Earth] Fragrant [Metal] Fleshy [Water] Rotten [Fire]

Output: Burning

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Window [Wood] Eyes [Earth] Mouth [Metal] Nose [Water] Ears [Fire]

Output: Tongue

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Tissue [Wood] Muscles [Earth] Flesh [Metal] Skin / Hair [Water] Bones [Fire]

Output: Vessels

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Emotion [Wood] Anger [Earth] Melancholy [Metal] Sad [Water] Fear [Fire]

Output: Happy

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Human Sound [Wood] Shout [Earth] Singing [Metal] Weeping [Water] Groaning [Fire]

Output: Laughter

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Direction [Wood] East [Earth] Center [Metal] West [Water] North [Fire]

Output: South

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Fluid Secretion [Wood] Tears [Earth] Saliva [Metal] Mucus [Water] Urine [Fire]

Output: Perspiration

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Grains [Wood] Wheat [Earth] Millet [Metal] Rice [Water] Brans / Peas [Fire]

Output: Rye

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Fruit [Wood] Peach [Earth] Apricot [Metal] Chestnuts [Water] Dates [Fire]

Output: Plum

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Meat [Wood] Poultry [Earth] Beef [Metal] Horse [Water] Pork [Fire]

Output: Lamb

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Vegetables [Wood] Mallow [Earth] Scallions [Metal] Onions [Water] Leeks [Fire]

Output: Grains

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Vegetables [Wood] Chives, Onions [Earth] Cabbage, Carrots [Metal] Watercress [Water] Coarse Greens [Fire]

Output: Endive

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [0] Chi Action [Wood] Explode / Implode [Earth] Rounded [Metal] Split [Water] Curving [Fire]

Output: Rising Explosion

Five Elements Chart for Traditional Chinese Medicine | CFCWA - Kung Fu and Tai Chi School | Winston-Salem, NC


Input: [Artist] Ott [Title] Jack Cheese [Album]

Output: Skylon


Input: [Artist] Gregory Isaacs [Title] Night Nurse [Album]

Output: K&D Rarities


Input: [Artist] Phuture Primitive [Title] Rights of Passage [Album]

Output: Sub Conscious


Input: [Artist] Sofa Surfers [Title] See The Light [Album]

Output: See The Light


Input: [Artist] Dzihan & Kamien [Title] Homebase [Album]

Output: Gran Riserva


Input: [Artist] NT Edit [Title] Kaliyou Kachaman [Album]

Output: Fashion Lounge


Input: [Artist] Senses [Title] Gypsy Girl [Album]

Output: Karma Kulture


Input: [Artist] Fila Brazilla [Title] DNA [Album]

Output: Man Ray


Input: [Artist] Kid Loco [Title] Shes My Lover [Album]

Output: A Grand Love Story


Input: [Artist] Arabian Travels [Title] Ya Ryah [Album]

Output: Six Degrees Collection d


Input: [Artist] Praful [Title] Moonglide [Album]

Output: Music For Cocktails


Input: [Artist] Govinda [Title] Plus Loin [Album]

Output: Sound Sutras


Input: [Artist] Roudoudou [Title] Trust In Me [Album]

Output: Spirit Of India


Input: [Artist] Dj Drez [Title] After The Rain [Album]

Output: Jahta Beats


Input: [Artist] Nickodemus [Title] Desert Dancer [Album]

Output: Endangered Species


Input: [Artist] Zap Mama [Title] Waduyusay? [Album]

Output: Ancestry In Progress


Input: [Artist] Desmond Williams [Title] First Touch [Album]

Output: Delights of the Garden


Input: [Artist] Toires [Title] Dereye [Album]

Output: Tantra Lounge


Input: [Artist] Boozoo Bajou [Title] Take it Slow [Album]

Output: Dust My Broom


Input: [Artist] Liftoff [Title] Cool it man [Album]

Output: The New Gold Standard


Input: [Artist] Transglobal Underground [Title] Vanilka [Album]

Output: Passages


Input: [Artist] Samiah Farah [Title] Cool [Album]

Output: High Fidelity Lounge


Input: [Artist] Fat Freddy's Drop [Title] Ernie [Album]

Output: Based On A True Story


Input: [Artist] St. Germain [Title] A Dub Expirience [Album]

Output: Tourist


Input: [Artist] Seven Dub [Title] Rock it Tonight [Album]

Output: Quango Dub


Input: [Artist] Nuphio [Title] Heer [Album]

Output: Indian Dpwntempo & Electrofunk


Input: [Artist] Tosca [Title] Honey (Supatone Dub) [Album]

Output: Tastes Of Honey


Input: [Artist] Shpongle [Title] Room 23c [Album]

Output: Tales of The Inexpressable


Input: [Artist] Black Uhuru [Title] Boom N Baff N Biff [Album]

Output: Abductions and Reconstructions


Input: [Month] 01 January [Theme] Positive Attitude [Description]

Output: Positive Attitude is being cheerful and setting our minds to look for and find the best in all situations.

Cub Scout Core Values - Cub Scout Pack 97 - Hopkinton, MA


Input: [Month] 02 February [Theme] Resourcefulness [Description]

Output: Resourcefulness is using human resources and other resources to their fullest.

Cub Scout Core Values - Cub Scout Pack 97 - Hopkinton, MA


Input: [Month] 03 March [Theme] Compassion [Description]

Output: Being kind and considerate, and showing concern for the well-being of others.

Cub Scout Core Values - Cub Scout Pack 97 - Hopkinton, MA


Input: [Month] 04 April [Theme] Faith [Description]

Output: Faith is having inner strength and confidence based on our trust in a higher power.

Cub Scout Core Values - Cub Scout Pack 97 - Hopkinton, MA


Input: [Month] 05 May [Theme] Health and Fitness [Description]

Output: Health and fitness is Being personally committed to keeping our minds and bodies clean and fit.

Cub Scout Core Values - Cub Scout Pack 97 - Hopkinton, MA


Input: [Month] 06 June [Theme] Perseverance [Description]

Output: Perseverance is sticking with something and not giving up, even if it is difficult.

Cub Scout Core Values - Cub Scout Pack 97 - Hopkinton, MA


Input: [Month] 07 July [Theme] Courage [Description]

Output: Courage is being brave and doing what is right regardless of our fears, the difficulties, or the consequences.

Cub Scout Core Values - Cub Scout Pack 97 - Hopkinton, MA


Input: [Month] 08 August [Theme] Honesty [Description]

Output: Honesty is telling the truth and being worthy of trust.

Cub Scout Core Values - Cub Scout Pack 97 - Hopkinton, MA


Input: [Month] 09 September [Theme] Cooperation [Description]

Output: Cooperation is being helpful and working together with others toward a common goal.

Cub Scout Core Values - Cub Scout Pack 97 - Hopkinton, MA


Input: [Month] 10 October [Theme] Responsibility [Description]

Output: Responsibility is fulfilling our duty to God, country, other people, and ourselves.

Cub Scout Core Values - Cub Scout Pack 97 - Hopkinton, MA


Input: [Month] 11 November [Theme] Citizenship [Description]

Output: Citizenship is contributing service and showing responsibility to local, state, and national communities.

Cub Scout Core Values - Cub Scout Pack 97 - Hopkinton, MA


Input: [Month] 12 December [Theme] Respect [Description]

Output: Respect is showing regard for the worth of someone or something.

Cub Scout Core Values - Cub Scout Pack 97 - Hopkinton, MA


Input: [Patent application number] 20080230825 [Published] 09-25-2008 [Description]

Output: NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - The invention relates to a nonvolatile semiconductor memory device including a semiconductor layer which has a source region, a drain region, and a channel forming region which is provided between the source region and the drain region; and a first insulating layer, a first gate electrode, a second insulating layer, and a second gate electrode which are layered over the semiconductor layer in that order. Part or all of the source and drain regions is formed using a metal silicide layer. The first gate electrode contains a noble gas element.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20080308796 [Published] 12-18-2008 [Description]

Output: Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20080308797 [Published] 12-18-2008 [Description]

Output: Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20080308804 [Published] 12-18-2008 [Description]

Output: Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20080308805 [Published] 12-18-2008 [Description]

Output: Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20080308806 [Published] 12-18-2008 [Description]

Output: Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20080308810 [Published] 12-18-2008 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The invention relates to a semiconductor device and a method for manufacturing the semiconductor device, which includes: an insulating film over a substrate; a first pixel electrode embedded in the insulating film; an island-shaped single-crystal semiconductor layer over the insulating film; a gate insulating film and a gate electrode; an interlayer insulating film which covers the island-shaped single-crystal semiconductor layer and the gate electrode; a wiring which electrically connects a high-concentration impurity region and the first pixel electrode to each other; a partition which covers the interlayer insulating film, the island-shaped single-crystal semiconductor layer, and the gate electrode and has an opening in a region over the first pixel electrode; a light-emitting layer formed in a region which is over the pixel electrode and surrounded by the partition; and a second pixel electrode electrically connected to the light-emitting layer. A surface of the first pixel electrode, which is in contact with the light-emitting layer, is flat, and a surface where the insulating film is in contact with the island-shaped single-crystal semiconductor layer roughly coincides with a surface where the first pixel electrode is in contact with the light-emitting layer.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090008639 [Published] 01-08-2009 [Description]

Output: Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090020762 [Published] 01-22-2009 [Description]

Output: DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090075456 [Published] 03-19-2009 [Description]

Output: Method for manufacturing SOI substrate and method for manufacturing semiconductor device - A highly reliable semiconductor device capable of high speed operation is manufactured over a flexible substrate at a high yield. A separation layer is formed over an insulating substrate by a sputtering method; the separation layer is flattened by a reverse sputtering method; an insulating film is formed over the flattened separation layer; a damaged area is formed by introducing hydrogen or the like into a semiconductor substrate; an insulating film is formed over the semiconductor substrate in which the damaged area is formed; the insulating film formed over the insulating substrate is bonded to the insulating film formed over the semiconductor substrate, the semiconductor substrate is separated at the damaged area so that a semiconductor layer is formed over the insulating substrate; the semiconductor layer is flattened so as to form an SOI substrate; and the semiconductor device is formed over the SOI substrate.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090085081 [Published] 04-02-2009 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device with high response speed and high reliability. In the method for manufacturing a semiconductor device of the invention, a bonding layer is formed over a substrate, an insulating film and a storage capacitor portion lower electrode are formed over the bonding layer, a single crystal silicon layer is formed over the insulating film, a storage capacitor portion insulating film is formed over the storage capacitor portion lower electrode, a wiring is formed over the storage capacitor portion insulating film, a channel forming region and a low concentration impurity region are formed over the single crystal silicon layer, and a gate insulating film and a gate electrode are formed over the single crystal silicon layer. The storage capacitor portion insulating film is formed by depositing a YSZ film with a single crystal silicon layer used as a base film, whereby the permittivity increases and thus the leakage current from the storage capacitor portion is suppressed.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090186437 [Published] 07-23-2009 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090186445 [Published] 07-23-2009 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090189155 [Published] 07-30-2009 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090189156 [Published] 07-30-2009 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090195154 [Published] 08-06-2009 [Description]

Output: DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE - It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090224252 [Published] 09-10-2009 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The semiconductor device includes a thin film transistor; a first interlayer insulating film over the thin film transistor; a first electrode electrically connected to one of a source region and a drain region, over the first interlayer insulating film; a second electrode electrically connected to the other of the source region and the drain region; a second interlayer insulating film formed over the first interlayer insulating film, the first electrode, and the second electrode; a first wiring electrically connected to one of the first electrode and the second electrode, on the second interlayer insulating film; and a second wiring not electrically connected to the other of the first electrode and the second electrode, on the second interlayer insulating film; in which the second wiring is not electrically connected to the other of the first electrode and the second electrode by a separation region formed in the second interlayer insulating film.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090233417 [Published] 09-17-2009 [Description]

Output: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The manufacturing method includes attaching a single crystal semiconductor layer to a supporting substrate, detecting a position of a deficiency region in the single crystal semiconductor layer, forming a non-single-crystal semiconductor layer over the single crystal semiconductor layer, selectively improving crystallinity of a portion of the non-single-crystal semiconductor layer based on the position of the deficiency region, the portion being overlapped with the deficiency region, and planarizing the non-single-crystal semiconductor layer over the supporting substrate.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090239335 [Published] 09-24-2009 [Description]

Output: Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090269870 [Published] 10-29-2009 [Description]

Output: LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20090305461 [Published] 12-10-2009 [Description]

Output: Semiconductor Device And Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100003783 [Published] 01-07-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type Or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100025675 [Published] 02-04-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100025676 [Published] 02-04-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100025677 [Published] 02-04-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability and a manufacturing method of the semiconductor device with high mass productivity. The summary is that an inverted-staggered (bottom-gate) thin film transistor is included in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, a channel protective layer is provided in a region that overlaps a channel formation region of the semiconductor layer, and a buffer layer is provided between the semiconductor layer and source and drain electrodes. An ohmic contact is formed by intentionally providing the buffer layer having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrodes.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100025678 [Published] 02-04-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100025679 [Published] 02-04-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100032665 [Published] 02-11-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100032666 [Published] 02-11-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device including thin film transistors having high electrical properties and reliability is proposed. Further, a method for manufacturing the semiconductor devices with mass productivity is proposed. The semiconductor device includes a thin film transistor which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, a source electrode layer and a drain electrode layer over the gate insulating layer, a buffer layer over the source electrode layer and the drain electrode layer, and a semiconductor layer over the buffer layer. A part of the semiconductor layer overlapping with the gate electrode layer is over and in contact with the gate insulating layer and is provided between the source electrode layer and the drain electrode layer. The semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc. The buffer layer contains a metal oxide having n-type conductivity. The semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layer.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100032667 [Published] 02-11-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain electrodes is reduced, and to provide a method for manufacturing the thin film transistor. An ohmic contact is formed by intentionally providing a buffer layer having a higher carrier concentration than the IGZO semiconductor layer between the IGZO semiconductor layer and the source and drain electrode layers.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100032668 [Published] 02-11-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. A metal oxide layer having higher carrier concentration than the semiconductor layer is provided intentionally as the buffer layer between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100035379 [Published] 02-11-2010 [Description]

Output: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100038639 [Published] 02-18-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100051940 [Published] 03-04-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100051949 [Published] 03-04-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor structure in which a source electrode and a drain electrode formed from a metal material are in direct contact with an oxide semiconductor film may lead to high contact resistance. One cause of high contact resistance is that a Schottky junction is formed at a contact plane between the source and drain electrodes and the oxide semiconductor film. An oxygen-deficient oxide semiconductor layer which includes crystal grains with a size of 1 nm to 10 nm and has a higher carrier concentration than the oxide semiconductor film serving as a channel formation region is provided between the oxide semiconductor film and the source and drain electrodes.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100055832 [Published] 03-04-2010 [Description]

Output: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method for manufacturing a thin film transistor in which contact resistance between an oxide semiconductor layer and source and drain electrode layers is small, the surfaces of the source and drain electrode layers are subjected to sputtering treatment with plasma and an oxide semiconductor layer containing In, Ga, and Zn is formed successively over the source and drain electrode layers without exposure of the source and drain electrode layers to air.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100065838 [Published] 03-18-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100065839 [Published] 03-18-2010 [Description]

Output: DISPLAY DEVICE - A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100065840 [Published] 03-18-2010 [Description]

Output: DISPLAY DEVICE - A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a conductive layer and a second oxide semiconductor layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with side face portions of the gate insulating layer and the conductive layer of the first wiring layer and the second wiring layer and a side face portion and a top face portion of the second oxide semiconductor layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100065842 [Published] 03-18-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to provide a thin film transistor in which an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn) is used and contact resistance of a source or a drain electrode layer is reduced, and a manufacturing method thereof. An IGZO layer is provided over the source electrode layer and the drain electrode layer, and source and drain regions having lower oxygen concentration than the IGZO semiconductor layer are intentionally provided between the source and drain electrode layers and the gate insulating layer, so that ohmic contact is made.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100072467 [Published] 03-25-2010 [Description]

Output: SEMICONDUCTOR DEVICE - A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100072468 [Published] 03-25-2010 [Description]

Output: DISPLAY DEVICE - A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100072469 [Published] 03-25-2010 [Description]

Output: DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - To provide a structure suitable for a common connection portion provided in a display panel. A common connection portion provided in an outer region of a pixel portion has a stacked structure of an insulating layer formed using the same layer as a gate insulating layer, an oxide semiconductor layer formed using the same layer as a second oxide semiconductor layer, and a conductive layer (also referred to as a common potential line) formed using the same layer as the conductive layer, in which the conductive layer (also referred to as the common potential line) is connected to a common electrode through an opening in an interlayer insulating layer provided over the first oxide semiconductor layer and an electrode opposite to a pixel electrode is electrically connected to the common electrode through conductive particles.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100072470 [Published] 03-25-2010 [Description]

Output: DISPLAY DEVICE - A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100072471 [Published] 03-25-2010 [Description]

Output: DISPLAY DEVICE - A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100084650 [Published] 04-08-2010 [Description]

Output: DISPLAY DEVICE - A pixel portion and a driver circuit driving the pixel portion are formed over the same substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor layer is used and a channel protective layer is provided over the oxide semiconductor layer serving as a channel formation region which is overlapped with the gate electrode. The driver circuit as well as the pixel portion is provided over the same substrate to reduce manufacturing costs.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100084651 [Published] 04-08-2010 [Description]

Output: DISPLAY DEVICE - With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100084652 [Published] 04-08-2010 [Description]

Output: DISPLAY DEVICE - A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100084653 [Published] 04-08-2010 [Description]

Output: DISPLAY DEVICE - The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100084654 [Published] 04-08-2010 [Description]

Output: DISPLAY DEVICE - In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100090217 [Published] 04-15-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Electric characteristics and reliability of a thin film transistor are impaired by diffusion of an impurity element into a channel region. The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer. A thin film transistor including an oxide semiconductor layer including indium, gallium, and zinc includes source or drain electrode layers in which first conductive layers including aluminum as a main component and second conductive layers including a high-melting-point metal material are stacked. An oxide semiconductor layer

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100102314 [Published] 04-29-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. The pixel portion and the driver portion are provided over the same substrate, whereby manufacturing cost can be reduced.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100109003 [Published] 05-06-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100109708 [Published] 05-06-2010 [Description]

Output: LOGIC CIRCUIT - An object is to apply a transistor using an oxide semiconductor to a logic circuit including an enhancement transistor. The logic circuit includes a depletion transistor

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100117075 [Published] 05-13-2010 [Description]

Output: SEMICONDUCTOR DEVICE - An object is to prevent an impurity such as moisture and oxygen from being mixed into an oxide semiconductor and suppress variation in semiconductor characteristics of a semiconductor device in which an oxide semiconductor is used. Another object is to provide a semiconductor device with high reliability. A gate insulating film provided over a substrate having an insulating surface, a source and a drain electrode which are provided over the gate insulating film, a first oxide semiconductor layer provided over the source electrode and the drain electrode, and a source and a drain region which are provided between the source electrode and the drain electrode and the first oxide semiconductor layer are provided. A barrier film is provided in contact with the first oxide semiconductor layer.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100117076 [Published] 05-13-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - It is disclosed that a semiconductor device includes an oxide semiconductor layer provided over a gate insulating layer, a source electrode layer, and a drain electrode layer, in which a thickness of the gate insulating layer located in a region between the source electrode layer and the drain electrode layer is smaller than a thickness of the gate insulating layer provided between the gate electrode layer and at least one of the source electrode layer and the drain electrode layer.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100117077 [Published] 05-13-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100117078 [Published] 05-13-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100117079 [Published] 05-13-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver circuit are provided over the same substrate, manufacturing cost can be reduced.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100117086 [Published] 05-13-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - An object is to suppress deterioration of element characteristics even when an oxide semiconductor is formed after a gate insulating layer, a source electrode layer, and a drain electrode layer are formed. A gate electrode layer is formed over a substrate. A gate insulating layer is formed over the gate electrode layer. A source electrode layer and a drain electrode layer are formed over the gate insulating layer. Surface treatment is performed on surfaces of the gate insulating layer, the source electrode layer, and the drain electrode layer which are formed over the substrate. After the surface treatment is performed, an oxide semiconductor layer is formed over the gate insulating layer, the source electrode layer, and the drain electrode layer.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100123130 [Published] 05-20-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100124796 [Published] 05-20-2010 [Description]

Output: LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100133530 [Published] 06-03-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100133531 [Published] 06-03-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A gate electrode layer over a substrate; a gate insulating layer over the gate electrode layer; a first source electrode layer and a first drain electrode layer over the gate insulating layer; an oxide semiconductor layer over the gate insulating layer; and a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer. A first part, a second part, and a third part of a bottom surface are in contact with the first source electrode layer, the first drain electrode layer, and the gate insulating layer respectively. A first part and a second part of the top surface are in contact with the second source electrode layer and the second drain electrode layer respectively. The first source electrode layer and the first drain electrode layer are electrically connected to the second source electrode layer and the second drain electrode layer respectively.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100136743 [Published] 06-03-2010 [Description]

Output: Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100163866 [Published] 07-01-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - One of factors that increase the contact resistance at the interface between a first semiconductor layer where a channel is formed and source and drain electrode layers is a film with high electric resistance formed by dust or impurity contamination of a surface of a metal material serving as the source and drain electrode layers. As a solution, a first protective layer and a second protective layer including a second semiconductor having a conductivity that is less than or equal to that of the first semiconductor layer is stacked successively over source and drain electrode layers without exposed to air, the stack of films is used for the source and drain electrode layers.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100213461 [Published] 08-26-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for forming a thin film transistor includes steps of forming a first wiring layer over a first electrode layer and forming a second wiring layer over a second electrode layer, wherein the first electrode layer extends beyond an end portion of the first wiring layer, the second electrode layer extends beyond an end portion of the second wiring layer, and a semiconductor layer is formed so as to be electrically connected to a side face and a top face of the first electrode layer and a side face and a top face of the second electrode layer.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100219410 [Published] 09-02-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to reduce to reduce variation in threshold voltage to stabilize electric characteristics of thin film transistors each using an oxide semiconductor layer. An object is to reduce an off current. The thin film transistor using an oxide semiconductor layer is formed by stacking an oxide semiconductor layer containing insulating oxide over the oxide semiconductor layer so that the oxide semiconductor layer and source and drain electrode layers are in contact with each other with the oxide semiconductor layer containing insulating oxide interposed therebetween; whereby, variation in threshold voltage of the thin film transistors can be reduced and thus the electric characteristics can be stabilized. Further, an off current can be reduced.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100244031 [Published] 09-30-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The drain voltage of a transistor is determined depending on the driving voltage of an element connected to the transistor. With downsizing of a transistor, intensity of the electric field concentrated in the drain region is increased, and hot carriers are easily generated. An object is to provide a transistor in which the electric field hardly concentrates in the drain region. Another object is to provide a display device including such a transistor. End portions of first and second wiring layers having high electrical conductivity do not overlap with a gate electrode layer, whereby concentration of an electric field in the vicinity of a first electrode layer and a second electrode layer is reduced; thus, generation of hot carriers is suppressed. In addition, one of the first and second electrode layers having higher resistivity than the first and second wiring layers is used as a drain electrode layer.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100252826 [Published] 10-07-2010 [Description]

Output: DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. The increase in the numbers of gate lines and signal lines makes it difficult to mount an IC chip having a driver circuit for driving the gate line and the signal line by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit driving the pixel portion are provided over the same substrate. The pixel portion and at least a part of the driver circuit are formed using thin film transistors in each of which an oxide semiconductor is used. Both the pixel portion and the driver circuit are provided over the same substrate, whereby manufacturing costs are reduced.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100276782 [Published] 11-04-2010 [Description]

Output: SEMICONDUCTOR DEVICE MOUNTED WITH FUSE MEMORY - A fuse element utilizing a reaction between two layers by feeding current is manufactured. A fuse element including a first layer formed of an oxide or a nitride and a second layer that becomes high resistant by nitridation or oxidation, in which the first layer and the second layer are in contact with each other, is manufactured. For example, the fuse element is manufactured by using indium tin oxide for the first layer and aluminum for the second layer. By generating joule heat by applying voltage to the first layer and the second layer, oxygen in the indium tin oxide enters the aluminum, which changes the aluminum into aluminum oxide that presents an insulating property. The fuse element can be manufactured by a similar process as that of forming a TFT.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100279474 [Published] 11-04-2010 [Description]

Output: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A formation of a gate electrode provided over an oxide semiconductor layer of a thin film transistor is performed together with a patterning of the oxide semiconductor layer.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100301328 [Published] 12-02-2010 [Description]

Output: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Homogeneity and stability of electric characteristics of a thin film transistor included in a circuit are critical for the performance of a display device including said circuit. An object of the invention is to provide an oxide semiconductor film with low hydrogen content and which is used in an inverted staggered thin film transistor having well defined electric characteristics. In order to achieve the object, a gate insulating film, an oxide semiconductor layer, and a channel protective film are successively formed with a sputtering method without being exposed to air. The oxide semiconductor layer is formed so as to limit hydrogen contamination, in an atmosphere including a proportion of oxygen. In addition, layers provided over and under a channel formation region of the oxide semiconductor layer are formed using compounds of silicon, oxygen and/or nitrogen.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20100314624 [Published] 12-16-2010 [Description]

Output: NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - The invention relates to a nonvolatile semiconductor memory device including a semiconductor layer which has a source region, a drain region, and a channel forming region which is provided between the source region and the drain region; and a first insulating layer, a first gate electrode, a second insulating layer, and a second gate electrode which are layered over the semiconductor layer in that order. Part or all of the source and drain regions is formed using a metal silicide layer. The first gate electrode contains a noble gas element.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20110024740 [Published] 02-03-2011 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device having a structure which enables sufficient reduction in parasitic capacitance is provided. In addition, the operation speed of thin film transistors in a driver circuit is improved. In a bottom-gate thin film transistor in which an oxide insulating layer is in contact with a channel formation region in an oxide semiconductor layer, a source electrode layer and a drain electrode layer are formed in such a manner that they do not overlap with a gate electrode layer. Thus, the distance between the gate electrode layer and the source electrode layer and between the gate electrode layer and the drain electrode layer are increased; accordingly, parasitic capacitance can be reduced.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20110024751 [Published] 02-03-2011 [Description]

Output: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a bottom-gate thin film transistor using the stack of the first oxide semiconductor layer and the second oxide semiconductor layer, an oxide insulating layer serving as a channel protective layer is formed over and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the insulating layer, an oxide insulating layer covering a peripheral portion (including a side surface) of the stack of the oxide semiconductor layers is formed.

Kengo Akimoto, Atsugi JP - Patent applications


Input: [Patent application number] 20110031496 [Published] 02-10-2011 [Description]

Output: LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel.

Kengo Akimoto, Atsugi JP - Patent applications